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KMID : 1102020190490010017
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Applied Microscopy
2019 Volume.49 No. 1 p.17 ~ p.17
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Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material
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An Byeong-Seon
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Abstract
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The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the direction.
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KEYWORD
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Ge-Sb-Te based chalcogenide, Transmission electron microscopy, Electron beam irradiation, Crystallization
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